Investigation of SiGe quantum dot structures by Large Angle CBED and Finite Element Analysis.

LACBED and two beam dynamical calculations are used to profile quantum well structures of Si/SiGe/Si containing self assembled Ge rich quantum dots. It is shown that a simple measurement of the asymmetry of two-beam rocking curves can give the Ge content of the buried layer. Finite element analysis is used to examine bulk strain relaxation effects in the Si cladding layers, resulting in a small (5 - 30 %) correction to the LACBED results.