Study of bevelled InP-based heterostructures by low energy SEM and AES

We report on low energy scanning electron microscopy characterisation of chemically bevelled InP/InGaAs/InGaAlAs and InP/InGaAsP heterostructures. A thickness of 3 nm for InP/InGaAlAs, 2 nm for InGaAs/InGaAlAs and 4–6 nm for InP/InGaAsP interfaces were obtained. These were compared with measurements by Auger electron spectroscopy (AES).