ABSTRACT
A diffusion bonded copper-alumina interface has been studied using electron energy loss spectroscopy (EELS). Investigations of the bulk alumina (polycrystalline) show that silica, a common commercial impurity, is present at the triple junctions in the form of fine mullite crystals in a glassy, silicon rich phase. EDX studies of the interface revealed that silicon is present in varying concentrations from lat% to 10at%. Spatial difference EELS analysis of the interface shows two distinct residuals: a coordination similar to an aluminosilicate for silicon rich areas and a coordination similar to that of metal-to-metal bonding for low silicon regions.
