ABSTRACT
A 30 keV Ga+ focused ion beam (FIB) operated with a beam current of IpA has been used to mill single-pixel width lines in (111) silicon with line doses in the range 1010-1012 ions cm−1. The ability of the FIB to produce site specific cross-sectional TEM samples was exploited to observe the depth and profile of the milled structures. Energy filtered images were also obtained to assess the extent of gallium incorporation from the ion source. Groove widths of 50–60 nm and depths up to 120 nm were achieved.
