ABSTRACT
We report a preliminary study of the SiC 4H structure by quantitative convergent beam electron diffraction. A full dynamical treatment of HOLZ line positions is used to measure lattice parameters at -165°C, which give a = 0.3085 nm and c = 1.0089 nm. Electron microdiffraction show that SiC 4H has the space group P63mc. The aim is to refine higher order structure factors for accurate measurement of the distance between Si and C double layers.
