ABSTRACT
Samples of thin aluminium trifluoride films, evaporated onto a AuPd buried electrode, were electron damaged in a HB501 STEM at various exposure doses. A home made conducting AFM was then used in an attempt to study the electrical properties of these damaged regions. EF images acquired in the STEM show widely dispersed metallic aluminium particles, believed to be protected by an aluminium oxide or aluminium fluoride coating. Topographical AFM images of such areas were obtained and the resistivity of electron damaged AIF3 was in excess of 1011Ωnm.
