ABSTRACT
Wide bandgap III-nitride semiconductors have emerged as highly promising materials for the fabrication of optoelectronic devices operating in the blue and UV regions of the electromagnetic spectrum. Using a novel UHV TEM with in-situ MBE the early stages of the growth of AIN on (0001) α-Al2O3 substrates has been studied. Growth of device quality GaN on sapphire substrates typically involves nitridation of the substrate followed by the deposition of an AIN buffer layer. We present an overview of our instrument and some results from a preliminary investigation of the sapphire nitridation process.
