In-situ Characterization of Lateral and Vertical Band Structure Profiles and Hole Storage Effects in PHEMTs by the Photoconduction Technique

This paper presents results of photoconduction (PC) studies, performed on fully fabricated PHEMTs. Previous results on the spectral PC characteristics are reviewed and applied for the determination of the vertical energy band structure. For the first time, detailed results on the amplification of the photogenerated charge by the transistor are presented and these data are used to obtain information on the lateral energy configuration.