ABSTRACT
Strain-balanced InGaAs/InGaAlAs coupled multi-quantum well (MQW) structures are investigated for use in near infra-red all-optical modulators. Magnetoabsorption and photocurrent measurements demonstrate the effects of strain on the band structure. The near coincidence of the first heavy and light hole levels in a tensile strained structure is shown to result in an enhanced response in the photomodulated transmission when compared with a compressively strained structure.
