ABSTRACT
A combination of GalnP waveguide and AIGaAs cladding layers was used for the fabrication of GaAs - based laser diodes. The replacement of AIGaAs by GalnP in the region of high photon density promises a higher facet stability. Ridge-waveguide laser diodes processed from such layers show a degradation rate comparable to conventional AIGaAs lasers and the facets appear to be more stable. An output power up to 400 mW at 1 A driving current (impulse condition) is obtained. However, results obtained on broad-area devices show that the growth of the GalnP/AlGaAs heterointerfaces is problematic due to As/P exchange and In carry-over.
