Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P

Impact ionisation coefficients have been deduced from photomultiplication measurements performed on MBE grown bulk Ga_0.52In_0.48P p-i-ns. Results indicate that β is greater than α with a ratio close to unity. Breakdown voltage measurements have also been performed over a wide range of temperatures (20K-600K). Results indicate that the breakdown voltage at 20K is about 8 % lower than at room temperature, while at 600K it is about 8 % higher.