ABSTRACT
A 3C-SiC compliant substrate technology for III-Nitrides materials has been developed by the carbonization of a semiconductor-on-insulator (SOI) structure, in this instance device quality (111) Si on SiO2. The subsequent growth of GaN on the 3C-SiC SOI produced highly oriented wurtzitic material with properties similar to those of GaN on sapphire. A preliminary parametric study of growth behavior has been completed and several characterization techniques have been used to investigate the properties of the GaN layers on 3C-SiC SOI. A corrected XRD FWHM of ~360 arcsec has been obtained for the (0002) reflection. At low excitation power the photoluminescence band edge emission intensity of GaN on 3C-SiC SOI is greater than that of high quality GaN on sapphire. This work shows the feasibility and potential of 3C-SiC SOI as low cost, large area, substrate suitable for III-Nitride growth.
