High-resolution Raman study of (001) n-GaP/n-GaP and n-GaP/n-Si

We present the results of high resolution (0.06 cm− 1 = 7.5 μeV) Raman scattering study of homoepitaxial n-GaP layers grown on (001) n-GaP substrate and neteroepitaxial r¡-GaP layers directly grown on (001) n-Si substrate by chloride vapor phase epitaxy. The observation of dipole-allowed LO-phonon-plasmon mode shows indications of possible Si atom interdiffusion at the (001) n-GaP/n-Si interface which seem to be a common problem not dependent on different growth techniques used including MBE growth.