Simulation of double avalanche injection filaments in GaAs structures

On the basis of 2-D numerical solution of quasi hydrodynamic equations the avalanche current filamentation is studied in GaAs Schottky M-n-n⁺ and p⁺-n-n⁺ structures. It is demonstrated that a lengthy n⁺-region in these structures provides the spontaneous formation of multiple solitary current filaments both at negative and at positive differential conductivity.