ABSTRACT
Dispersion of two-dimensional exciton polaritons in a semiconductor microcavity containing bulk excitons in a central layer has been considered using the transfer matrix technique and Pekar’s additional boundary conditions. Solving dispersion equations for TE and TM polarized light modes we have obtained angle-dependent complex self-energies of eigen polariton states, which have been compared with frequencies of resonant features in the calculated spectra Dispersion of cavity polaritons has been found to have a shape of multiple anticrossings.
