ABSTRACT
Using a specially designed reflection high energy electron diffraction (RHEED) system, the 2D-3D transition during InAs/GaAs heteroepitaxial growth is studied. For the first time the dynamics of RHEED patterns is used for a detailed analysis of the kinetics of quantum dots formation. It is found that there is a shift in time-dependent reflected intensity curves which is explained by different lateral sizes of 3D islands at the initial stage of pseudomorphic layer decomposition.
