ABSTRACT
3-dimensional lattices of InSb quantum dots were designed by infilling the free voids of crystalline dielectric matrix with the structure of the precious opal. With decreasing temperature 3 regimes of conductivity can be distinguished, all of them are related to interdot tunnelling. The functional form of R(T) and R(B) dependence is specific for these regimes and has no analogy neither in disordered semiconductors nor in planar arrays of nanostructures since this is closely related to the ordering of the ensemble. The low-T percolation may be replaced with homogeneous current distribution by increasing the bias voltage while keeping electrons confined within dots.
