ABSTRACT
A quasi-static model is presented to simulate capacitance-voltage (C-V) characteristic of Schottky barrier on multilayer semiconductor heterostructure. This model was applied to investigate the C-V characteristics of heterostructures with a sheet of ordered quantum dots (QDs). From fitting of experimental C-V characteristics of Schottky barrier structure with QDs measured at different temperatures we can extract the following parameters: (i) electron energy levels in QDs, (ii) the sheet concentration of QDs, and (iii) the distance from the surface to the plane with quantum QDs.
