ABSTRACT
InAs1-xSbx is an attractive choice for the development of optoelectronic devices because it provides the lowest direct energy gaps of the III-V semiconductors. Therefore, photoluminescence (PL) studies have been made on MBE-grown InAs0.808Sb0.192 on GaSb substrate. Free-to-bound and donor-acceptor pair peaks at 4–7 and 10–14 meV below the band edge, respectively, have been resolved. PL measurements on Be-ion implanted InAs0.905As0.095/GaSb and epitaxially Be-doped InAs0.955As0.045/GaSb resulted in Be acceptor levels of ~30 meV and ~40 meV above the valence band, respectively.
