ABSTRACT
We report on photoluminescence (PL) and Raman scattering (RS) studies of GaN layers of zincblende (cubic) symmetry grown by MBE on GaAs substrates. The results enable us to understand the PL behavior in terms of a composite doping effect on the PL familiar for compensated A 3-B 5 compounds. The polarized RS data have shown the selection rules for the zincblende lattice symmetry of a high quality and deliver the one-phonon density-of-states (DOS).
