ABSTRACT
A variety of n-N and p-P ZnSe/GaAs heterostructures with BeTe buffer have been studied by the ambient cross-sectional STM. STM results and data of the current-voltage dependencies across the interface show that an insertion of the BeTe layers drastically improves the n-ZnSe/n-GaAs interface homogeneity, provides better growth of the subsequent II-VI layers and also leads to the better electrical contact of the most hard to grow p-ZnSe with p-GaAs what is due to the enhanced conductivity of the ZnSe region bordering the interface.
