ABSTRACT
We applied optically detected magnetic resonance and exciton level-anticrossing spectroscopy for characterization of GaAs/AlAs superlattices grown under different conditions including growth interruptions. A difference in exchange splitting of excitons localized at opposite interfaces was found and the nature of an additional low-energy emission line in superlattices grown with interruptions after GaAs layers was clarified. Linear polarization at anticrossings in type-I SL revealed an existence of a splitting of the exciton radiative levels.
