ABSTRACT
Photoelastic characterizaion, togather with Nomarski microscope observation, has been made on slip lines generated along the (110) directions during thermal processing of LEC-grown (001) GaAs wafers. It is demonstrated for the first time that the present photoelastic characterization reveals clearly the slip lines generated not only from the wafer edge but also in the inner region of wafer, while the Nomarski microscope observation exhibits only the slip lines generated from the wafer edge. The slip line generation is discussed with a thermoelastic model based on resolved shear stress of {111}〈110〉 slip system.
