ABSTRACT
An ordering in Ga0.5In0.5P and (AlxGa1-x)0.5In0.5P grown on exactly (001) oriented GaAs substrates by metalorganic chemical vapour deposition at temperatures 610 and 670 °C has been studied by transmission electron microscopy. The influence of lattice mismatch, dislocations as well as doping upon the degree of ordering and ordered domain structure was the main subject of the investigation.
