ABSTRACT
Properties of GaAs wafers with different growth defects have been analyzed by means of light diffraction on transient free carriers and electro-optic gratings. The nonequilibrium carrier lifetime, diffusitivity, and internal electrical field were measured by optical techniques, while the electrical control of defects and inhomogeneities have been performed by thermally stimulated current and photo-e.m.f. methods (TS). By TS methods the trap spectra and their influence on the internal field formation were measured. The “real” GaAs crystal inhomogeneity model is proposed.
