ABSTRACT
It has been shown that the Raman scattering spectroscopy is a well suitable and informative method for diagnostic of thin (< 1 μm) heavily doped layers not only for binary semiconductors and AlxGa1-xAs (x=0.15–0.55), but for Inl-xGaxAsyPl-y (x=0.1–0.42; y=0.1–0.96), and In0.53Ga0.47As as well. Raman scattering spectroscopy together with SIMS in-depth profiling have allowed to determine the diffusion regimes which provide the total activation of zinc in the diffused layers of InP, InGaAs, InGaAsP, AlGaAs, as well as the regimes of Si implantation into InP, InGaAs, and InGaAsP.
