Diagnostics of time instability of insulator - III-V semiconductor compound interface characteristics

The available techniques of the estimation of the time instability of insulator - III-V semiconductor compound interface characteristics (TIC) have been analyzed. The method of the TIC determination based on either long-term isothermal capacitance transient or voltage transient was proposed for MIS structures. It has been demonstrated with comparative investigations of TIC for InP-SiO₂CVD) and Si-SiO₂(CVD) structures, which were obtained in one process, as well as for Si-SiO₂(thermal) structure, that the relative changes in either capacitance or voltage are a criterion for TIC, as well as allowing to determine the energy and spatial distribution of deep level centers in the insulator in the vicinity of the interface.