ABSTRACT
Calibration curves for the high-frequency phonon-plasmon mode (PPM) versus the electron concentration have been established in p-InP and InGaAsP. Moreover, calibration curves for the Raman scattering (RS) intensity versus the hole concentration has been defined in p-InP, p-In0.53Ga0.47As, and p-GaAs at the LO-phonon frequency. The carrier concentration determined by RS well agreed with the data obtained by Hall-measurement for InP and InGaAsP. The results obtained allowed to investigate the hole distribution profiles in InP, InGaAs(P), and GaAs. This permitted to study the various stages of Zn diffusion and to correlate these profiles with the SIMS Zn atoms profiles.
