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      Diagnostics of semiconductor structures based on InP and its related compounds by vibration spectroscopy
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      Chapter

      Diagnostics of semiconductor structures based on InP and its related compounds by vibration spectroscopy

      DOI link for Diagnostics of semiconductor structures based on InP and its related compounds by vibration spectroscopy

      Diagnostics of semiconductor structures based on InP and its related compounds by vibration spectroscopy book

      Diagnostics of semiconductor structures based on InP and its related compounds by vibration spectroscopy

      DOI link for Diagnostics of semiconductor structures based on InP and its related compounds by vibration spectroscopy

      Diagnostics of semiconductor structures based on InP and its related compounds by vibration spectroscopy book

      ByA.T. Gorelenok, A.V. Kamanin, I.A. Mokina, N.M. Shmidt, O.V. Titkovaand, I.Yu. Yakimenko
      BookCompound Semiconductors 1996

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      Edition 1st Edition
      First Published 1997
      Imprint CRC Press
      Pages 4
      eBook ISBN 9781003063087
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      ABSTRACT

      Calibration curves for the high-frequency phonon-plasmon mode (PPM) versus the electron concentration have been established in p-InP and InGaAsP. Moreover, calibration curves for the Raman scattering (RS) intensity versus the hole concentration has been defined in p-InP, p-In0.53Ga0.47As, and p-GaAs at the LO-phonon frequency. The carrier concentration determined by RS well agreed with the data obtained by Hall-measurement for InP and InGaAsP. The results obtained allowed to investigate the hole distribution profiles in InP, InGaAs(P), and GaAs. This permitted to study the various stages of Zn diffusion and to correlate these profiles with the SIMS Zn atoms profiles.

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