Epitaxial CdF2 Layers on Silicon: Structural Studies and Luminescence of Rare-Earth Ions

Cadmium fluoride layers grown at different temperatures on CaF₂/Si(111) by molecular beam epitaxy are studied. To characterize crystal quality of the films Rutherford Backscattering Spectrometry and X-Ray Diffraction were used. Luminescence properties of films doped with Er and Gd were investigated by cathodoluminescence measurements.