ABSTRACT
The optical phenomena in strong heating electric field applied along the layers of multiple quantum well structures were investigated experimentally and theoretically. Change of infrared and far-infrared absorption coefficient for two light polarizations due to inter- and intra-subband transitions of hot carriers was experimentally observed in GaAs/AlGaAs and Ge/GeSi structures. Calculations took into account electron heating, nonparabolicity and exchange interaction. The temperatures of hot electrons and holes were determined from experimental data. The far-infrared spectra of spontaneous emission caused by intersubband transitions of hot holes were investigated. Experimental data agree with theory.
