ABSTRACT
We have proposed and developed an original method of controlled epitaxial growth of high quality SiC and GaN epi-layers named by sublimation sandwich method (SSM). In this report the results of growth study of the epitaxial layers mainly SiC are represented. We discuss obtained experimental data on the controlled doping, controlled polytype growth and especially on the problem of the native defects. A number of unexpected experimental effects is shown to be possible to explain taking into account the low velocity of diffusion relaxation processes in the solid state of the materials with the great connection energy.
