Heteroepitaxy of Si1-xGex Layers and Ge-Si1-xGex Superlattices on Si(100) Substrates by GeH4-Si MBE: Growth Kinetics and Structural Studies

We have applied GeH₄-Si MBE for growing Ge-Si_1-xGe_x superlattices on Si(100). A numerical simulation of a growth kinetics has been made for a wide range of technological parameters. We have investigated the distribution and the structure of defects inside heteroepitaxial Si_1-xGe_x layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. We found out that plastic deformation on the layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer.