ABSTRACT
Selective epitaxial growth of InP was performed on a (100) InP wafer tilted 2° off toward [110] and on a untilted (100) InP wafer by low pressure metalorganic chemical vapor deposition. Asymmetric growth behavior was observed on a tilted wafer but not on a untilted wafer. Effects of wafer tilting angle and stripe misalignment angle on asymmetric growth behavior were systematically investigated. Step density was calculated for the two facets as a function of α and β, and its result is consistent with the experimental observation.
