ABSTRACT
InP and InGaAs epilayers were grown on the semi-insulating(SI) InP substrates by liquid phase epitaxy(LPE) with a rare-earth(RE) compound Pr2O3 doping into growth melt during each epitaxial process. Most grown layers yield mirror-like surfaces and good crystal quality. By adding of Pr2O3, the corresponding Hall measurements indicate that n-type background concentration of those InP and InGaAs grown lasers will decrease from a value of 2.8 X 1017 to 3.0 X 1016 cm-3 and from 1.6 X 1016 to 2.0 X 1015 cm-3, respectively. Their correspondent 77 K mobility also significantly increases from a value of 1326 to 3775 cm2 V-s and from 15321 to 32171 cm2 /V-s. The photoluminescence(PL) spectra of Pr2O3 doped InP and InGaAs epilayers display strong intensity ratios for band peak to the impurity peak, which also demonstrates the fact that the grown layers exhibit a pureier crystal quality.
