ABSTRACT
We describe an emerging integrated circuit technology based on the heterodimensional 2-D MESFET device for ultra low power applications. By utilizing this technology one order of magnitude reduction in power consumption can be achieved. We present 2-D MESFET device characteristics and compact digital circuits based on this device. In particular, the design of a D Flip-Flop is used to point out the advantages of the heterodimensional technology over state-of-the-art MESFET technology. Our simulations show that by utilizing the improved functionality of the 2-D MESFET, the number of FETs can be reduced by at least 33%, the area can be reduced by a factor of 30 and the active power dissipation can reduced by an order of magnitude compared to the design based on conventional MESFET technology.
