ABSTRACT
Porous GaN has been obtained on the basis of epitaxial GaN layers grown on 6H-SiC substrates. GaN with porous structure was formed by anodisation of GaN samples in electrochemical cell under UV illumination. The morphology of the samples was investigated by scanning electron microscopy (SEM). Chemical analysis of the samples after anodisation was done by Auger electron spectroscopy. The crystalline structure of the anodised samples was characterised by X-ray difraction spectroscopy and their optical properties were studied using cathodoluminescence. These results showed that the porous material obtained after anodisation was GaN. Ultraviolet luminescence from porous GaN was observed.
