ABSTRACT
A study of red and deep red (690–790 nm) vertical cavity surface emitting lasers with both top and bottom AlGaAs/Al-oxide distributed Bragg reflectors (DBRs) and native AlGa-oxide current apertures is reported. The all-AlGaAs devices consist of a multiple quantum well active region surrounded by current spreading layers, followed by 5.5 period all-semiconductor DBRs and/or native Al-oxide DBRs. At a peak emission near 780 nm, a power conversion efficiency over 30% is achieved, with threshold current below 1 mA and peak output power over 4 mW.
