ABSTRACT
It is shown that doping of melted solutions with yttrium during liquid-phase epitaxy makes it possible to obtain n-GaP layers and doping of melted solutions with yttrium + magnesium makes it possible to obtain p-GaP layers with photoluminescence in the pure green (λ = 555 nm) region of the spectrum at 300 K. Light-emitting diodes based on such layers exhibit electroluminescence in the pure green region of the spectrum at 300 K. The pure green luminescence is explained by a substantial decrease in the donor background of group VI elements and primarily oxygen and sulfur.
