ABSTRACT
Intensive wide-band photoluminescence (PL) was received from oxidized porous layers prepared on nonstechiometry randomly arranged CVD SiC films deposited on silicon substrates. The spectra consist of several overlapping wide bands with the most short-wavelength maxima at 3.28 eV. Decay times of PL pulses is smaller than 15 ns. PL intensity and spectrum characteristics depend on regimes and duration of oxidation process very considerably.
