ABSTRACT
Electro-physical and luminescence properties of GaN(Zn,O) epitaxial layers and emitting-i-n-structures with active regions of this material have been investigated. Luminescence band 2.55eV with linear polarization up to 60% has been found. With increasing concentration of Zn and O, nonpolarized bands 2.4eV, 2.2eV, 1.8eV was consequently excited in addition to the polarized band. On the basis of i-n-GaN(Zn,O)-structures the LED’s have been created, namely, with blue polarized; white and controlled from blue to red radiation. In order to separate active layers from strong electric field regions the high-resistant i-region of the structures was grown of alternating layers GaN(Zn) and GaN(Zn,0).
