ABSTRACT
Power amplifiers based on GaAs HBTs are now in widespread use for cellular communication systems. Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GaInP/GaAs DHBTs with GaInP collectors have the potential to meet many of the requirements, based on lower offset voltage, and absence of saturation charge storage. To best exploit these characteristics, amplifier architectures which employ HBTs in switching mode can be used, such as amplifiers containing on-chip dc-dc converters and band-pass Class S amplifiers.
