ABSTRACT
The magneto-transport of an Si atomic layer doped GaAs was studied at various temperatures. The negative magneto-resistance (NMR) was observed at cryogenic temperatures (4.2 - 40K), which was enhanced by decreasing the carrier density, the lattice temperature, or the electric field applied parallel to the layer. It was found that, by introducing two scaling factors, the NMR is expressed by a universal function which is determined by the concentration of Si atoms.
