ABSTRACT
The photocapacitonce method under constant capacitance condition is applied to investigate the stoichiometry-dependent deep levels in Sn-doped n-type InP prepared by 4th-annealing at 700°C under various controlled phosphorus vapor pressure. Change of level densities is shown as a function of phosphorus vapor pressure and the effects of amphoteric impurity Sn on the stoichiometry-dependent defects is discussed in comparison with the results of none-doped InP. In order to reveal the precise optical transition mechanism of these deep levels, the excitation PHCAP method is also applied.
