ABSTRACT
Optical transitions in lattice-matched GalnNAs/GaAs quantum wells (QWs) were analyzed by photoluminescence and photoreflectance spectroscopy. At the compositions of In=14% and N=3.4-5.0%, it is clearly demonstrated that the QWs have a shallow “type-II” alignment with a large conduction band offset of over 460 meV and a negative valence band offset of less than -24meV. At a higher nitrogen concentration, the conduction-band well structures become deeper. In this study, such unique nature of GalnNAs/GaAs band structures is confirmed experimentally for the first time.
