ABSTRACT
This paper presents the thermal annealing effects on GaInNAs/GaAs quantum well structures grown by chemical beam epitaxy (CBE). The room temperature PL peak intensity of GaInNAs/GaAs QWs increased up to 70 times higher than that of as-grown one by annealed at 675°C for 30 seconds. The blue-shift of PL peak wavelength of GaInNAs/GaAs QWs and GaNAs/GaAs QWs was measured to examine the structural change of QWs. It was found that the blue-shift was caused by Indium diffusion and small nitrogen atoms diffusion even after high temperature annealing. Thermal annealing at an optimal annealing temperature gives us significant improvement in optical quality without noticeable inter-diffusion in QWs.
