ABSTRACT
Effect of hydrogen on electron-cyclotron-resonance plasma-excited molecular beam epitaxial growth process of GaN was studied using hydrogen-nitrogen mixed gas plasma as a group V source. In Ga-rich growth condition, GaN growth rate was drastically increased by the addition of hydrogen gas into nitrogen plasma. Reflection high energy electron diffraction (RHEED) patterns indicated that effective V/III ratio was increased by the addition of hydrogen. From the analyses by quadrupole mass spectrometer (QMS) and optical emission spectroscopy (OES), it was found that NHX radical families were generated in the hydrogen-nitrogen mixed gas plasma, which dominantly contributed to the increase of growth rate.
