ABSTRACT
GaN samples grown by various methods, have been investigated using transmission electron microscopy. It is found that stacking faults in the c plane can be formed easily when the growth takes place perpendicular to the c direction. Similar stacking faults have also been observed when epitaxial lateral overgrowth technique is used. The displacement vector of the stacking fault has been determined to be 1/6[ https://www.w3.org/1998/Math/MathML"> 2 ¯ 023 https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003063100/ce4a879a-688a-4c77-a95b-e9b91ed32a4e/content/inline-math99.tif" xmlns:xlink="https://www.w3.org/1999/xlink"/> ], It is the normal stacking fault found in the wurtzite crystal structure. The effect of stacking faults on GaN growth has been discussed.
