Preparation of polycrystalline InGaN thin films on indium tin oxide/glass substrates by RF plasma enhanced chemical vapor deposition

InGaN thin films with GaN low temperature (200 “C) fabricated buffer layers were grown on indium tin oxide (ITO)/glass substrates at 450 ~ 550 C by RF plasma enhanced chemical vapor deposition (PECVD). Preferred (0002) and (1011) planes of the thin films were characterized by X-ray diffraction (XRD) and successful incorporation of In with TMIn flow rate in the films was calculated with the Vegard's law. Results of the optical absorption measurements showed that the absorption bandedges shifted to the lower energy with increasing In solid compositions. Atomic force microscopy (AFM) showed that the size of grains tended to be larger with In solid composition although the surface deteriorated.