ABSTRACT
The sticking coefficient of the elements in the ZnSe, ZnMgSSe and ZnCdSe compounds was directly measured using a mass spectrometer at the cell port of MBE. When ZnSe was grown with c(2x2) and (2x1) at the growth temperature (Tg ) of 280°C, the sticking coefficients of Zn and Se were 0.55 and 0.75, respectively. We obtained the sensitivity of the Bayard-Alpert (BA) gauge from the measurement of the sticking coefficient of Zn, Cd, and Se using a mass spectrometer. The mole fraction of Cd and the growth rate of ZnCdSe at Tg =280°C were calculated based on our proposed growth mechanism, which is modified to include high-vapor-pressure elements.
