ABSTRACT
ZnS1-xTex epilayers were grown on GaAs substrates by hot-wall epitaxy. Studied were their structural and optical properties as a function of Te composition. The energy gap of the ZnS1-xTex alloy was found to be quadratic with the bowing parameter b = 3.8. The strong room temperature photoluminescence was observed for ZnSTe epilayer when Te composition is smaller than 0.3.
